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  1. 100. 学内刊行物 (紀要、研究報告)
  2. 101-3. 奈良教育大学紀要 (人文・社会科学, 自然科学)
  3. 第31巻 第2号 自然科学 (1982)

Theoretical Study of Ion Neutralization Process Near Silid Surfaces, Ⅱ -Range of the Process-

http://hdl.handle.net/10105/2323
http://hdl.handle.net/10105/2323
e81d4957-fa23-4f11-9551-122d42fce45b
名前 / ファイル ライセンス アクション
NUE31_2_121-130.pdf NUE31_2_121-130.pdf (390.9 kB)
アイテムタイプ 紀要論文 / Departmental Bulletin Paper(1)
公開日 2010-02-04
タイトル
タイトル Theoretical Study of Ion Neutralization Process Near Silid Surfaces, Ⅱ -Range of the Process-
言語
言語 eng
資源タイプ
資源タイプ departmental bulletin paper
著者 MUDA, Yoshiaki

× MUDA, Yoshiaki

MUDA, Yoshiaki

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内容記述タイプ Abstract
内容記述 A one-electron model calculation of the ion neutralization process near bcc (100) surfaces has been made basing on the resonant tunneling model. It has been shown that the ion survival probability Ps, at an ion velocity v in the range of 0.4~3KeV often used in ISS converges very slowly as a function of number n of atoms or layers in the substrate : Even 11x11x11 atomic cluster model is still too small, etc. It has been shown that the charge fluctuation on the target atom produced by the electron exchange between the ion and the target atom propagates into the substrate more than a few tens of atomic spacings, and returning to near the collision point in the collision time, it affects the final value of the electron occupation number N00(T) on the ion, and so the neutralization probability. It has been estimated that the range of the neutralization process amounts to as much as 1OO atoms, indicating that the ion neutralization process near the solid surface is a wide range process. It has also been shown that the range or n is an increasing function of 1/v and of the band width or hopping integrals between atoms in the substrate.
書誌情報 奈良教育大学紀要. 自然科学

巻 31, 号 2, p. 121-130, 発行日 1982-11-25
ISSN
収録物識別子タイプ ISSN
収録物識別子 05472407
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AN00181070
著者版フラグ
出版タイプ VoR
出版者
出版者 奈良教育大学
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